DSA of block copolymer films on lithographically defined chemically nanopatterned surfaces is an emerging technology that is well-positioned for commercialization in nanolithography and naomanufacturing. Generation 1 DSA at a resolution of 25 to 28 nm full pitch is an area of intense research interest in the semiconductor manufacturing community. DSA of (PS-b-PMMA) films on lithographically defined chemically nanopatterned surfaces is the primary focus of activity, and the main research objectives revolve around demonstrations that DSA can meet manufacturing requirements related to degrees of perfection, processing latitude, and integration of the technology with existing infrastructure, and device design for use with DSA patterns. Here we will discuss the thermodynamic and dynamic system parameters that govern or influence the assembly process.
Despite the tremendous progress with Generation 1 materials and processes, critical research issues must be addressed in order to push the DSA technology over the tipping point to widespread implementation in nanomanufacturing. A key roadblock is the establishment of proven pathways to realize sub 10 nm resolution, and scaling to 5 nm; the resolution limit of PS-b-PMMA is ~12 nm. Here we will also discuss how we may apply what we have learned from Generation 1 towards systems capable of reaching the sub 10 nm regime.